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 M54/74HCT245/640/643 M54/74HCT245/640/643
OCTAL BUS TRANSCEIVER (3-STATE): HCT245 NON INVERTING HCT640 INVERTING, HCT643 INVERTING/NON INVERTING
.HI .LOWPOWERDI .COMPATI .OUTPUTDRI .SYMMETRI .BALANCEDPROPAGATI .PI
DESCRIPTION
GH SPEED tPD = 10 ns (TYP.) at VCC = 5V SSIPATION o ICC = 4 A (MAX.) at TA = 25 C BLE WITH TTL OUTPUTS VIH = 2V (MIN.) VIL = 0.8V (MAX.) VE CAPABILITY 15 LSTTL LOADS CAL OUTPUT IMPEDANCE |IOH| = IOL = 6 mA (MIN) ON DELAYS tPLH = tPHL N AND FUNCTION COMPATIBLE WITH 54/74LS245/640/643
B1R (Plastic Package)
F1R (Ceramic Package)
M1R (Micro Package)
C1R (Chip Carrier)
ORDER CODES : M54HCTXXXF1R M74HCTXXXM1R M74HCTXXXB1R M74HCTXXXC1R
The M54/74HCT245, HCT640 and HCT643 utilise silicon gate C2MOS technology to achive operating speeds eqivalent to LSTTL devices. Along with the low power dissipation and high noise immunity of standad CMOS integrated circuit, it possesses the capability to drive 15 LSTTL loads. These IC's are intended for two-way asynchronous communication between data buses, and the direction of data trasmission is determined by DIR input. The enable input (G) can be used to disable the device so that the buses are effectively isolated. All input are equipped with protection circuits against static discharge and transient discharge. These integrated circuits have input and output PIN CONNECTION (top view)
HCT245 HCT640
characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption. IT IS PROHIBITED TO APPLY A SIGNAL TO A BUS TERMINAL WHEN IT IS IN OUTPUT MODE AND WHEN A BUS THERMINAL IS FLOATING (HIGH IMPEDANCE STATE), IT IS REQUESTED TO FIX THE INPUT LEVEL BY MEANS OF EXTERNAL PULL DOWN OR PULL UP RESISTOR.
HCT643
October 1993
1/11
M54/M74HCT245/640/643
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1 2, 3, 4, 5, 6, 7, 8, 9 18, 17, 16, 15, 14, 13, 12, 11 19 10 20 SYMBOL DIR A1 to A8 B1 to B8 NAME AND FUNCTION Directional Control Data Inputs/Outputs Data Inputs/Outputs
G GND VCC
Output Enabel Input (Active LOW) Ground (0V) Positive Supply Voltage
IEC LOGIC SYMBOLS
HCT245 HCT640 HCT643
TRUTH TABLE
INPUT G L L H
X: "H" or "L" Z: High impedance
FUNCTION DIR L H X A BUS OUTPUT INPUT Z B BUS INPUT OUTPUT Z HCT245 A=B B=A Z
OUTPUT HCT640 A=B B=A Z HCT643 A=B B=A Z
2/11
M54/M74HCT245/640/643
LOGIC DIAGRAM (HCT640)
NOTE: IN CASE OF HCT245 OR HCT643, INPUT INVERTERS MARKED* AT A BUS AND B BUS ARE ELIMINATED RESPECTIVELY
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 35 70 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o C
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
3/11
M54/M74HCT245/640/643
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time (VCC = 4.5 to 5.5V) Parameter Value 4.5 to 5.5 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 500 Unit V V V
o o
C C
ns
DC SPECIFICATIONS
Test Conditions Symbol Parameter VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 VI = IO=-20 A VIH or IO=-6.0 mA V IL VI = IO= 20 A VIH or IO= 6.0 mA V IL VI = VCC or GND VI = VCC or GND VI = VCC or GND Per Input pin VI = 0.5V or V I = 2.4V Other Inputs at V CC or GND IO= 0 TA = 25 oC 54HC and 74HC Min. 2.0 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 2.0 Max. Min. 2.0 Max. V Unit
VIH
High Level Input Voltage Low Level Input Voltage High Level Output Voltage
V IL
0.8
0.8
0.8
V
V OH
4.4 4.18
4.5 4.31 0.0 0.17 0.1 0.26 0.1 0.5 4 2.0
4.4 4.13 0.1 0.33 1 5.0 40 2.9
4.4 4.10 0.1 V 0.4 1 10 80 3.0 A A A mA V
VOL
Low Level Output Voltage
4.5
II IOZ ICC ICC
Input Leakage Current 3 State Output Off State Current Quiescent Supply Current Additional worst case supply current
5.5 5.5 5.5 5.5
4/11
M54/M74HCT245/640/643
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
Test Conditions Symbol Parameter VCC (V) 4.5 4.5 4.5 4.5 4.5 4.5 CL (pF) 50 50 150 50 150 50 RL = 1K RL = 1K RL = 1K DIR, G An, Bn HCT245 HCT640/643 TA = 25 oC 54HC and 74HC Min. Typ. 7 13 18 19 24 17 5 13 41 39 Max. 12 22 30 30 38 30 10 Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. 15 28 38 38 48 38 10 Min. Max. 18 33 45 45 57 45 10
Unit
tTLH tTHL tPLH tPHL tPZL tPZH tPLZ tPHZ CIN CI/OUT CPD (*)
Output Transition Time Propagation Delay Time Output Enable Time Output Disable Time Input Capacitance Output Capacitance Power Dissipation Capacitance
ns ns ns ns ns ns pF pF pF
(*) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD *VCC *fIN + ICC/8 (per circuit)
SWITCHING CHARACTERISTICS TEST WAVEFORM
5/11
M54/M74HCT245/640/643
TEST CIRCUIT ICC (Opr.) C PD CALCULATION
CPD is to be calculated with the following formula by using the measured value of ICC (Opr.) in the test circuit opposite. I CC (Opr.) CPD = f IN x VCC In determining the value of CPD, a relatively high frequency of 1 MHz was applied to fIN, in orther to eliminate any error caused by the quiescent supply current.
6/11
M54/M74HCT245/640/643
Plastic DIP20 (0.25) MECHANICAL DATA
mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.34 8.5 2.54 22.86 7.1 3.93 0.130 0.053 0.254 1.39 0.45 0.25 25.4 0.335 0.100 0.900 0.280 0.155 1.65 TYP. MAX. MIN. 0.010 0.055 0.018 0.010 1.000 0.065 inch TYP. MAX.
DIM.
P001J
7/11
M54/M74HCT245/640/643
Ceramic DIP20 MECHANICAL DATA
mm MIN. A B D E e3 F G I L M N1 P Q 7.9 2.29 0.4 1.27 0.22 0.51 0.5 22.86 2.79 0.55 1.52 0.31 1.27 0.090 0.016 0.050 0.009 0.020 3.3 1.78 0.020 0.900 0.110 0.022 0.060 0.012 0.050 TYP. MAX. 25 7.8 0.130 0.070 MIN. inch TYP. MAX. 0.984 0.307
DIM.
4 (min.), 15 (max.) 8.13 5.71 0.311 0.320 0.225
P057H
8/11
M54/M74HCT245/640/643
SO20 MECHANICAL DATA
DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.40 0.50 12.60 10.00 1.27 11.43 7.60 1.27 0.75 8 (max.) 0.291 0.19 13.00 10.65 0.35 0.23 0.50 45 (typ.) 0.496 0.393 0.050 0.450 0.299 0.050 0.029 0.512 0.419 0.10 mm TYP. MAX. 2.65 0.20 2.45 0.49 0.32 0.013 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.007 0.096 0.019 0.012
P013L
9/11
M54/M74HCT245/640/643
PLCC20 MECHANICAL DATA
mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180
DIM.
P027A
10/11
M54/M74HCT245/640/643
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11


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